公司能够研发拥有自主知识产权的4英寸和6英寸VGF法单晶生长炉，建成了4英寸和6英寸VGF法“零位错”太阳能电池用锗单晶片生产线。
We invented 4’’ & 6’’ VGF monocrystal furnace with independent intellectual property right, and set up a production line of 4’’ & 6’’ zero EPD VGF germanium wafer producing line.
锗晶片技术规格
|
生长方法 Growth Method |
VGF |
|
|
掺杂类型 Dopant |
P型：镓 p-type: Ga |
N型：砷 n-type: As |
|
晶片形状 Wafer Shape |
圆形（尺寸2、3、4、6英寸） Round (DIA: 2’’, 3’’, 4’’, 6") |
|
|
晶向 Surface Orientation * |
(100)±0.5° |
|
|
* Other Orientations maybe available upon request 其他晶向要求可根据客户需求加工 |
||
|
电阻率 Resistivity (Ω.cm) |
根据客户要求 As Required |
|
|
位错 Etch Pitch Density (cm2) |
≤ 300 |
|
|
厚度 Thickness (µm) |
175±25（或根据客户要求） 175±25 (or as required) |
|
|
TTV [P/P] (µm) |
≤ 10 |
|
|
WARP (µm) |
≤ 15 |
|
|
IF** (mm) |
32.5±1 |
|
|
**If needed by customer 根据客户需要 |
||
|
主面抛光 Surface |
E/E, P/E, P/G |
|
